Photoluminescence characterization of Mg implanted GaN

Characterization of an Mg-implanted GaN p-i-n Diode

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.

Characterization of Ni-implanted GaN and SiC

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...

PHOTOLUMINESCENCE STUDY OF GaN

Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Αl 2 O 3 (100), (111)Si, and (00.1)6H—SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emissioii centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with opt...

Lowtemperature epitaxial growth and photoluminescence characterization of GaN